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Nonvolatile Photoelectric Memory Induced by Interfacial Charge at the Ferroelectric PZT-Gated Black

Ferroelectric field effect transistor (FeFET) memory characterized with nonvolatile, non-destructive readout operation and low power consumption attracts tremendous attention towards next generation random access memory (RAM). However, the electrical reading processes in conventional FeFETs may attenuate the ferroelectric (FE) polarization and lead to readout crosstalk. Here, a photoelectric type FeFET memory with alternative readout through two-dimensional (2D) black phosphorus (BP)/lead zirconate titanate (PZT) heterostructures is developed. Based on charge-mediated electric-field control, a unique polarization dependent photoresponse is observed, resulting in both positive photoconductivity (PPC) and negative photoconductivity (NPC) in a single piece of device via FE gating. This enables a nonvolatile photoelectric memory working in a novel “electrical writing-optical reading” process mode. Furthermore, the device exhibits a reliable data retention (over 3.6×103 s) and fatigue (exceeding 500 cycles) performance with extremely low energy consumption (driving voltage < 10 mV). The demonstrated BP/PZT heterostructure memory devices highlight a pathway to high-performance photoelectric storage devices as light-activated logic gates for on-chip optical communications.


Yaojin Wang (汪尧进) Laboratory of Advanced Sensitive Materials and Devices
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Department of Materials Science and Engineering.Nanjing University of Science and Technology